NTMS4800N
TYPICAL PERFORMANCE CURVES
12.5
10
7.5
10V
4.5 V
4V
3.8 V
T J = 25 ° C
3.6 V
3.4 V
12.5
10
7.5
V DS ≥ 10 V
5
2.5
3.2 V
5
2.5
T J = 125 ° C
0
0
0.5
1.0
1.5
2.8 V
2.0
3.0 V
2.5
0
1
1.5
T J = 25 ° C
2 2.5
3
T J = ? 55 ° C
3.5 4
4.5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.095
0.085
0.075
0.065
T J = 25 ° C
I D = 7.5 A
0.030
0.025
0.020
T J = 25 ° C
V GS = 4.5 V
0.055
0.045
0.015
0.035
0.025
0.015
0.010
0.005
V GS = 10 V
0.005
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
1.4
I D = 7.5 A
V GS = 10 V
100000
V GS = 0 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10000
1000
T J = 150 ° C
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
100
3
6
9
12
15
18
21
24
27
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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相关代理商/技术参数
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NTMS4801NR2G 功能描述:MOSFET NFET SO8 30V 9.9A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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